?????? yangzhou yangjie electroni c technology co., ltd. www.21yangjie.com s-s150 rev. 1.2, 28-apr-14 MBSK12S thru mbsk110s ?? schottky bridge rectifier features ?? outline dimensions and mark i o 1.0a v rrm 20v~100v ?? schottky chip ? high surge forward current capability ? low vf ? applications ??? general purpose 1 phase bridge rectifier applications ??? limiting values absolute maximum rating item symbol unit conditions mbsk 12s 14s 16s 18s 110s ??? repetitive peak reverse voltage v rrm v 20 40 60 80 100 ? average rectified output current i o a 60hz ? ? ta=25 60hz sine wave, r-load, ta=25 ? on alumina substrate 1.0 ?? - on glass-epoxi substrate 0.8 ???? surge(non- repetitive)forward current i fsm a 60h z ??? t j =25 60h z sine wave, 1 cycle, t j =25 40 ??? ???? current squared time i 2 t a 2 s 1ms t<8.3ms tj=25 1ms t<8.3ms tj=25 rating of per diode 6.6 ? storage temperature t stg -55 ~+150 junction temperature t j -55 ~+150 t a =25 electrical characteristics t a =25 unless otherwise specified item symbol unit test condition ? max ?? peak forward voltage v fm v i fm =0.5a, ????? i fm =0.5a, pulse measurement, rating of per diode 0.55 0.65 0.75 ? peak reverse current i rrm m a v rm =v rrm , ????? v rm =v rrm , pulse measurement, rating of per diode 0.5 thermal resistance r j-a /w ???? between junction and ambient, on alumina substrate 76 ?????- between junction and ambient, on glass-epoxi substrate 134 r j-l ? between junction and lead 20 dimensions in inches and (millimeters) .157(4.00) .142(3.60) .276(7.0) max .102(2.60) .087(2.20) .193(4.90) .177(4.50) .033(0.84) .022(0.56) .014(0.35) .006(0.15) .083(2.12) .043(1.10) .008(0.20) max .106(2.70) .090(2.30) .118(3.0) max .043(1.10) .028(0.70) .053(1.53) .037(0.95) .053(1.53) .037(0.95) mbs 0.094 (2.40) 0.047 (1.20) 0.236 (6.00) 0.072 (1.84) mounting pad layout compliant rohs
?????? yangzhou yangjie electroni c technology co., ltd. www.21yangjie.com s-s150 rev. 1.2, 28-apr-14 MBSK12S thru mbsk110s ?? ? characteristics(typical) 0 0 0.3 io(a) ta ( ) ? 1 io-ta fig1:io-ta curve 160 ?? sine wave r-load 40 80 120 0.6 0.9 1.2 1.5 1.8 ? soldering land 1mm1mm 1mm1mm conductor layer 35um 20um substrate thickness 0.64mm ?- on glass-epoxi substrate on alumina substrate 0.4 0.5 0.6 0.7 0.8 0.9 0.01 0.02 0.05 vf(v) if(a) ?3? fig3: forward voltage 0.1 1 2 4 6 0.5 ta=25 mbsk18s~mbsk110s MBSK12S~mbsk14s mbsk16s 020406080100 0.001 0.01 0.1 1 100 voltage(%) ir(ma) tj=150 tj=25 fig4:typical reverse characteristics ?4 10 mbsk18s~mbsk110s mbsk16s MBSK12S~mbsk14s 1 0 ?2? 2 5 10 20 50 100 10 ? sine wave ? non-repetitive tj=25 fig2:surge forward current capadility number of cycles 0 8.3ms 1cycle ifsm 8.3ms 20 30 40 50 60 70
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